Structure and optical properties of thin As2S3-In2S3 films
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Abstract
This paper deals with the optical properties of thin As2S3-In2S3 films. The thin layers were deposited by thermal co-evaporation of As2S3 and In2S3. The composition of the coatings was controlled by x-ray microanalysis; it was found to be close to the expected one. The refractive index n and optical band gap EoPtg were calculated from the transmittance and reflectance spectra. The results showed that the refractive index of thin As-S films is not affected by the addition of 1 at% indium and it increases from 2.46 to 2.58 for thin film with 13 at% In. A decrease in the changes in the refractive index, Δn, after exposure to light or annealing with addition of indium in arsenic sulfide is observed. To explain the influence of the indium on the photoinduced changes in the optical properties of thin As-S-In films, the glass structure was investigated by infrared spectroscopy. The calculated values of the optical constants were compared with those obtained from ellipsometric measurements.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Structure and optical properties of thin As<sub>2</sub>S<sub>3</sub>-In<sub>2</sub>S<sub>3</sub> films</title><author><name sortKey="Todorov, R" uniqKey="Todorov R">R. Todorov</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute of Optical Materials and Technologies 'Acad. J. Malinowski', Bulgarian Academy of Sciences, Acad. G. Bonchev Str., b1.109</s1><s2>1113 Sofia</s2><s3>BGR</s3><sZ>1 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Bulgarie</country><placeName><settlement type="city">Sofia</settlement><region nuts="2">Sofia-ville (oblast)</region></placeName></affiliation></author><author><name sortKey="Tsankov, D" uniqKey="Tsankov D">D. Tsankov</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Institute of Organic Chemistry with Centre of Phytochemistry, Bulgarian Academy of Sciences, Acad. G. Bonchev St. b1.9</s1><s2>1113 Sofia</s2><s3>BGR</s3><sZ>2 aut.</sZ></inist:fA14><country>Bulgarie</country><placeName><settlement type="city">Sofia</settlement><region nuts="2">Sofia-ville (oblast)</region></placeName></affiliation></author><author><name sortKey="Pirov, J" uniqKey="Pirov J">J. Pirov</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute of Optical Materials and Technologies 'Acad. J. Malinowski', Bulgarian Academy of Sciences, Acad. G. Bonchev Str., b1.109</s1><s2>1113 Sofia</s2><s3>BGR</s3><sZ>1 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Bulgarie</country><placeName><settlement type="city">Sofia</settlement><region nuts="2">Sofia-ville (oblast)</region></placeName></affiliation></author><author><name sortKey="Petkov, K" uniqKey="Petkov K">K. Petkov</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute of Optical Materials and Technologies 'Acad. J. Malinowski', Bulgarian Academy of Sciences, Acad. G. Bonchev Str., b1.109</s1><s2>1113 Sofia</s2><s3>BGR</s3><sZ>1 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Bulgarie</country><placeName><settlement type="city">Sofia</settlement><region nuts="2">Sofia-ville (oblast)</region></placeName></affiliation></author></titleStmt><publicationStmt><idno type="inist">11-0430998</idno><date when="2011">2011</date><idno type="stanalyst">PASCAL 11-0430998 INIST</idno><idno type="RBID">Pascal:11-0430998</idno><idno type="wicri:Area/Main/Corpus">002852</idno><idno type="wicri:Area/Main/Repository">002475</idno></publicationStmt><seriesStmt><idno type="ISSN">0022-3727</idno><title level="j" type="abbreviated">J. phys., D. Appl. phys. : (Print)</title><title level="j" type="main">Journal of physics. D, Applied physics : (Print)</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Absorption coefficients</term><term>Annealing</term><term>Arsenic sulfides</term><term>Dispersion relations</term><term>Energy gap</term><term>Illumination</term><term>Indium sulfide</term><term>Infrared spectra</term><term>Optical constants</term><term>Photoinduced effect</term><term>Reflectivity</term><term>Refractive index</term><term>Thin films</term><term>Vacuum evaporation</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Constante optique</term><term>Evaporation sous vide</term><term>Relation dispersion</term><term>Effet photoinduit</term><term>Indice réfraction</term><term>Bande interdite</term><term>Coefficient absorption</term><term>Facteur réflexion</term><term>Eclairement</term><term>Spectre IR</term><term>Recuit</term><term>Couche mince</term><term>Sulfure d'arsenic</term><term>Sulfure d'indium</term><term>In2S3</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">This paper deals with the optical properties of thin As<sub>2</sub>S<sub>3</sub>-In<sub>2</sub>S<sub>3</sub> films. The thin layers were deposited by thermal co-evaporation of As<sub>2</sub>S<sub>3</sub> and In<sub>2</sub>S<sub>3</sub>. The composition of the coatings was controlled by x-ray microanalysis; it was found to be close to the expected one. The refractive index n and optical band gap E<sup>oPt</sup><sub>g</sub> were calculated from the transmittance and reflectance spectra. The results showed that the refractive index of thin As-S films is not affected by the addition of 1 at% indium and it increases from 2.46 to 2.58 for thin film with 13 at% In. A decrease in the changes in the refractive index, Δn, after exposure to light or annealing with addition of indium in arsenic sulfide is observed. To explain the influence of the indium on the photoinduced changes in the optical properties of thin As-S-In films, the glass structure was investigated by infrared spectroscopy. The calculated values of the optical constants were compared with those obtained from ellipsometric measurements.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0022-3727</s0></fA01><fA02 i1="01"><s0>JPAPBE</s0></fA02><fA03 i2="1"><s0>J. phys., D. Appl. phys. : (Print)</s0></fA03><fA05><s2>44</s2></fA05><fA06><s2>30</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Structure and optical properties of thin As<sub>2</sub>S<sub>3</sub>-In<sub>2</sub>S<sub>3</sub> films</s1></fA08><fA11 i1="01" i2="1"><s1>TODOROV (R.)</s1></fA11><fA11 i1="02" i2="1"><s1>TSANKOV (D.)</s1></fA11><fA11 i1="03" i2="1"><s1>PIROV (J.)</s1></fA11><fA11 i1="04" i2="1"><s1>PETKOV (K.)</s1></fA11><fA14 i1="01"><s1>Institute of Optical Materials and Technologies 'Acad. J. Malinowski', Bulgarian Academy of Sciences, Acad. G. Bonchev Str., b1.109</s1><s2>1113 Sofia</s2><s3>BGR</s3><sZ>1 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></fA14><fA14 i1="02"><s1>Institute of Organic Chemistry with Centre of Phytochemistry, Bulgarian Academy of Sciences, Acad. G. Bonchev St. b1.9</s1><s2>1113 Sofia</s2><s3>BGR</s3><sZ>2 aut.</sZ></fA14><fA20><s2>305401.1-305401.8</s2></fA20><fA21><s1>2011</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>5841</s2><s5>354000508564840120</s5></fA43><fA44><s0>0000</s0><s1>© 2011 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>51 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>11-0430998</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Journal of physics. D, Applied physics : (Print)</s0></fA64><fA66 i1="01"><s0>GBR</s0></fA66><fC01 i1="01" l="ENG"><s0>This paper deals with the optical properties of thin As<sub>2</sub>S<sub>3</sub>-In<sub>2</sub>S<sub>3</sub> films. The thin layers were deposited by thermal co-evaporation of As<sub>2</sub>S<sub>3</sub> and In<sub>2</sub>S<sub>3</sub>. The composition of the coatings was controlled by x-ray microanalysis; it was found to be close to the expected one. The refractive index n and optical band gap E<sup>oPt</sup><sub>g</sub> were calculated from the transmittance and reflectance spectra. The results showed that the refractive index of thin As-S films is not affected by the addition of 1 at% indium and it increases from 2.46 to 2.58 for thin film with 13 at% In. A decrease in the changes in the refractive index, Δn, after exposure to light or annealing with addition of indium in arsenic sulfide is observed. To explain the influence of the indium on the photoinduced changes in the optical properties of thin As-S-In films, the glass structure was investigated by infrared spectroscopy. The calculated values of the optical constants were compared with those obtained from ellipsometric measurements.</s0></fC01><fC02 i1="01" i2="3"><s0>001B70H66L</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>Constante optique</s0><s5>02</s5></fC03><fC03 i1="01" i2="3" l="ENG"><s0>Optical constants</s0><s5>02</s5></fC03><fC03 i1="02" i2="3" l="FRE"><s0>Evaporation sous vide</s0><s5>03</s5></fC03><fC03 i1="02" i2="3" l="ENG"><s0>Vacuum evaporation</s0><s5>03</s5></fC03><fC03 i1="03" i2="3" l="FRE"><s0>Relation dispersion</s0><s5>04</s5></fC03><fC03 i1="03" i2="3" l="ENG"><s0>Dispersion relations</s0><s5>04</s5></fC03><fC03 i1="04" i2="X" l="FRE"><s0>Effet photoinduit</s0><s5>05</s5></fC03><fC03 i1="04" i2="X" l="ENG"><s0>Photoinduced effect</s0><s5>05</s5></fC03><fC03 i1="04" i2="X" l="SPA"><s0>Efecto fotoinducido</s0><s5>05</s5></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Indice réfraction</s0><s5>06</s5></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Refractive index</s0><s5>06</s5></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Bande interdite</s0><s5>07</s5></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Energy gap</s0><s5>07</s5></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Coefficient absorption</s0><s5>08</s5></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Absorption coefficients</s0><s5>08</s5></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Facteur réflexion</s0><s5>09</s5></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Reflectivity</s0><s5>09</s5></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Eclairement</s0><s5>10</s5></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Illumination</s0><s5>10</s5></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Spectre IR</s0><s5>11</s5></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Infrared spectra</s0><s5>11</s5></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Recuit</s0><s5>12</s5></fC03><fC03 i1="11" i2="3" l="ENG"><s0>Annealing</s0><s5>12</s5></fC03><fC03 i1="12" i2="3" l="FRE"><s0>Couche mince</s0><s5>15</s5></fC03><fC03 i1="12" i2="3" l="ENG"><s0>Thin films</s0><s5>15</s5></fC03><fC03 i1="13" i2="3" l="FRE"><s0>Sulfure d'arsenic</s0><s2>NK</s2><s5>16</s5></fC03><fC03 i1="13" i2="3" l="ENG"><s0>Arsenic sulfides</s0><s2>NK</s2><s5>16</s5></fC03><fC03 i1="14" i2="X" l="FRE"><s0>Sulfure d'indium</s0><s5>17</s5></fC03><fC03 i1="14" i2="X" l="ENG"><s0>Indium sulfide</s0><s5>17</s5></fC03><fC03 i1="14" i2="X" l="SPA"><s0>Indio sulfuro</s0><s5>17</s5></fC03><fC03 i1="15" i2="3" l="FRE"><s0>In2S3</s0><s4>INC</s4><s5>52</s5></fC03><fN21><s1>297</s1></fN21></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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